High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier
نویسندگان
چکیده
ELECT A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36% are achieved at current densities of 100, 200, 300 and 400 A/cm, respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wavelength blueshift, compared with GaN barrier LEDs. Owing to the low-voltage performance, higher wall-plug efficiency can be achieved for blue LEDs with CSG InGaN barriers.
منابع مشابه
Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes
Articles you may be interested in Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple...
متن کاملGraded-host phosphorescent light-emitting diodes with high efficiency and reduced roll-off
Related Articles Encapsulating light-emitting electrochemical cells for improved performance Appl. Phys. Lett. 100, 193508 (2012) Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure J. Appl. Phys. 111, 093110 (2012) Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting d...
متن کاملEfficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading
We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN light-emitting diodes (LEDs) may be connected to the current crowding effect. A numerical model of internal quantum efficiency calculation is presented that takes into account nonuniform lateral carrier injection in the active region. Based on this model, we examine the effect of current crowding on the effic...
متن کاملEffective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field
A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may d...
متن کاملCurrent injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k p method is used to calculate the band structure for InGaN QW. The analysis indicates that the...
متن کامل